Abstract
The early development of GaAs FET monolithic microwave integrated circuits (MMICs) for phased array radar applications at Plessey in the UK over the period of 1975 through 1989 is described. Following the introduction of a basic GaAs MMIC fabrication process in the early 1970’s at Plessey Central Research Laboratories (Caswell) and the characterization of distributed and lumped element components at Plessey Applied Research Laboratories (Roke Manor) a complete range of MMICs were designed and fabricated to be used in fully integrated transmit/receive modules in S-band.
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