Abstract
Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. Detailed scaling analysis of surface fluctuation in real and Fourier space yielded characteristic exponents αloc = 0.78 ± 0.07, α = 2.20 ± 0.08, αs = 1.49 ± 0.22, β = 0.86 ± 0.05 and βloc = 0.43 ± 0.10, which are very different from those predicted by the local growth models and are not related to any known universality classes. The observed anomalous scaling pattern, characterized by power law scaling dependence of interface width on deposition time differently at local and global scale, with rapid roughening of the growth front has been discussed to arise as a consequence of a nonlocal effect in the form of diffusional instability.
Highlights
Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs
Recent developments in scaling invariance and universality have led to a growing interest in kinetic roughening theory with special attention being paid to studies on roughness evolution in thin films grown under far-from-equilibrium conditions[1,2,3,4]
The self-affine roughness is widely characterized by engaging it to a dynamic scaling form wherein the root mean square of the fluctuations of the surface height i.e. the interface width w defined as w (r, t) = (h (→r, t) − h (→r, t) )[2] of size L and r ≤L, evolves following
Summary
Dynamics of surface evolution in CdS thin films grown by chemical bath deposition technique has been studied from time sequence of atomic force micrographs. The study of evolving surfaces provides insight to the fundamental growth dynamics and enables one to control the roughness of the films. The self-affine roughness is widely characterized by engaging it to a dynamic scaling form wherein the root mean square of the fluctuations of the surface height i.e. the interface width w defined as w (r, t) = (h (→r , t) − h (→r , t) )[2] of size L and r ≤L, evolves following
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