Abstract
The dynamic behavior of sandwich-structured magnetoresistive (MR) memory elements is studied analytically by solving Gilbert's equation together with the one-dimensional micromagnetic torque equation. The typical element is 2 mu m*20 mu m and consists of two 150-AA thick magnetic layers separated by a 50-AA thick nonmagnetic layer. The easy axis is along the short dimension of the element. The theoretical study shows that wall nucleation is present when the switching is driven by a field applied in the easy-axis direction, whereas switching by a field in the hard-axis direction is accomplished by coherent rotation. The switching speed predicted by this one-dimensional model is in the nanosecond range and increases linearly with the external fields. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
