Abstract
Dynamic properties of truly three-dimensional-confined InAs∕InP quantum dot (QD) lasers obtained by molecular beam epitaxy growth on a (311)B oriented substrate are reported. The relative intensity noise and small signal modulation bandwidth experiments evidence maximum relaxation frequency of 3.8GHz with a clear relaxation oscillation peak, indicating less damping than InAs∕GaAs QD lasers. The Henry factor amounts to ∼1.8 below threshold and increases to ∼6 above threshold, which is attributed to band filling of the thick wetting layer.
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