Abstract
The effects of a crystal growth joint in metal-induced laterally crystallized polycrystalline silicon thin-film transistor devices and circuits employing the precrystallization method were studied. It was found that the joint after symmetric precrystallization results in slight degradation in field-effect mobility and little degradation in leakage current, but its location after asymmetric precrystallization has a close connection with degradation only in leakage current and not in mobility. Moreover, DC bias-induced changes in the performance of ring oscillators were studied. Inverters fabricated using a fully asymmetric precrystallized silicon film had very high dynamic and stable performances, compared with inverters fabricated using a symmetric precrystallized silicon film.
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