Abstract
The nonlinear dynamics of a compensated semiconductor in the case of an impurity-related electrical breakdown in a classically strong magnetic field under the effect of shortened Hall contacts and resonance radiation, the frequency of which corresponds to the ionization energy of hydrogen-like donor impurities, is evaluated. As a result, both regular and chaotic self-sustained oscillations are obtained. It is found that all three scenarios for the origination of chaos are realized for corresponding values of the bifurcation parameters. The results obtained have the potential become the theoretical foundation for the operation of an easily controlled high-frequency oscillator whose modes of operation (the switched-on mode and the transition from the regular mode to a chaotic mode and vice versa) could be changed by varying the illumination intensity.
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