Abstract
Dynamic Avalanche (DA) effects in the Super-Junction Trench IGBTs are analyzed through 3-D TCAD simulations for the first time. A DA free solution for high power density and low loss is proposed and demonstrated in detail. Furthermore, simulation results show that DA results in significant increase in turn-off losses in the Super-Junction Trench IGBTs at high current density operations, which poses a fundamental limit on the power density of IGBT applications. In contrast, the Super-Junction Trench Clustered IGBTs remain DA free at high current density and show low switching losses due to enhanced PMOS action. Therefore, the Super-Junction Trench IGBTs are well suitable for high power density operations with a potential to operate beyond the 1-D unipolar 4H-SiC limit.
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