Abstract
Abstract Deep levels in indium-doped Cd0.9Mn0.1Te material were studied by DLTS, thermally stimulated capacitance (TSC) and photocapacitance measurements. The persistent photoeffects observed at low temperature indicate existence of metastable centers in the material. One of the trap related to metastable defects has been identified: the level with activation energy obtained from DLTS studies equal to 0.22 eV, a very high concentration of the associated traps (higher than 10% of the concentration of the shallow levels) and energy barrier for capture equal to 0.1 eV. Stokes shift for this level has been found to be equal to 0.58 eV.
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