Abstract
DUV ANR photoresists are evaluated as a function of the molar ratio of aromatic hydroxyl sites on the phenolic resin to the melamine methoxy sites in the crosslinking agent. This ratio, χ, which is proportional to [ArOH]: [OCH3], is vital to appropriate resist function. The melamine content strongly affects the absorbance properties, dissolution rate, crosslinking efficiency, and the imaging properties of DUV ANR photoresists. The χ ratio is studied at low (110°C) and high (140°C) post-exposure bake temperatures. At low χ, the resists can function as dyed resists for reflective substrates. There is an upper limit on χ which defines the transparency limit for these resists.
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