Abstract

This paper presents a novel dual-band DC biasing network and its application in the design of GaN power amplifiers (PA). By integrating offset double sided parallel strip line (DSPSL) which can easily realize high characteristic impedance and thus narrow microstrip line, the proposed biasing network can obtain much higher operation frequency ratio than the conventional design. To demonstrate the new methodology, two dual-band GaN power amplifiers applying the presented dual-band DC biasing network are implemented. The operation frequencies are 1.8/3.5 GHz and 0.9/3.5 GHz. Three-section networks for complex load are used for dual-frequency input and output matching. Simulation and measurement shows good agreement, which fully validate the feasibility and validity of the presented DC bias networks in power amplifier designs.

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