Abstract
SiC wafers, due to their hardness and brittleness, suffer from a low feed rate and a high failure rate during the dicing process. In this study, a novel dual laser beam asynchronous dicing method (DBAD) is proposed to improve the cutting quality of SiC wafers, where a pulsed laser is firstly used to introduce several layers of micro-cracks inside the wafer, along the designed dicing line, then a continuous wave (CW) laser is used to generate thermal stress around cracks, and, finally, the wafer is separated. A finite-element (FE) model was applied to analyze the behavior of CW laser heating and the evolution of the thermal stress field. Through experiments, SiC samples, with a thickness of 200 μm, were cut and analyzed, and the effect of the changing of continuous laser power on the DBAD system was also studied. According to the simulation and experiment results, the effectiveness of the DBAD method is certified. There is no more edge breakage because of the absence of the mechanical breaking process compared with traditional stealth dicing. The novel method can be adapted to the cutting of hard-brittle materials. Specifically for materials thinner than 200 μm, the breaking process in the traditional SiC dicing process can be omitted. It is indicated that the dual laser beam asynchronous dicing method has a great engineering potential for future SiC wafer dicing applications.
Highlights
SiC power devices have continuously increased their share in the high-power semiconductor market in the last decade and are used in a series of applications such as electric vehicles and urban rail transit
The results showed that the prediction results of the artificial neural network model were better than those of the finite element model
A series of experiments were conducted to cut SiC using a dual laser beam asynchronous dicing method based on the finite element simulation
Summary
SiC power devices have continuously increased their share in the high-power semiconductor market in the last decade and are used in a series of applications such as electric vehicles and urban rail transit. Due to their hardness and brittleness characteristics, there is one bottleneck in the SiC device manufacturing field, which is the wafer dicing process. The thermal separation method is a critical technology that is suitable for the dicing of hard-brittle materials [1]. The thermal separation method developed the Micromachines 2021, 12, 1331.
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