Abstract
We have constructed a dual-band ultraviolet photodetector by growing high quality MgxZn1−xO layers on Si substrate with molecular beam epitaxy. The device performance was studied by current-voltage, capacitance-voltage, spectra photoresponse, and time-resolved photoresponse characterizations. It demonstrates a high UV/visible light rejection ratio of more than 2 orders of magnitude and a fast response speed of less than 100 ms. The cutoff wavelength can be at solar-blind (280 nm)/visible-blind (301 nm) region by applying 1 V forward/2 V reverse bias. The working principle of the dual-band photodetector was finally investigated by interpretation of the specific carrier transport behavior with the energy band diagram.
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