Dual Ag electrodes for semitransparent organic light-emitting diodes

Abstract

Abstract Thick ReO3 film (>30 nm) is found to serve as an active hole-injecting layer as well as a passive buffer layer to suppress point discharge of Ag anode. This buffered Ag electrode enables fabrication of transparent organic light emitting diodes (TOLEDs). The excellent conductivity of ReO3, second only to metal amongst oxide semiconductors, is made possible to use a thick hole-injecting buffer layer. The use of thick ReO3 layer alleviates strong local electric field on a rough electrode surface. For device optical design, the transfer matrix method is used to provide theoretical guidance on electrode fabrication. Based on microcavity theory in TOLEDs, the optical path parameters are also optimized to the thicknesses of different functional organic films. To test the device performance, we fabricated normal fluorescent green Alq3 devices. The data show that TOLEDs with ReO3-buffered Ag electrodes have good photochromic uniformity on both sides of the devices.