Abstract
In this paper, we address the problem of research and development of the advanced optoelectronic devices designed for on-chip optical interconnections in integrated circuits. The development of the models, techniques, and applied software for the numerical simulation of carrier transport and accumulation in high-speed AIIIBV (A and B refer to group III and V semiconductors, respectively) optoelectronic devices is the purpose of the paper. We propose the model based on the standard drift-diffusion equations, rate equation for photons in an injection laser, and complex analytical models of carrier mobility, generation, and recombination. To solve the basic equations of the model, we developed the explicit and implicit techniques of drift-diffusion numerical simulation and applied software. These aids are suitable for the stationary and time-domain simulation of injection lasers and photodetectors with various electrophysical, constructive, and technological parameters at different control actions. We applied the model for the simulation of the lasers with functionally integrated amplitude and frequency modulators and uni-travelling-carrier photodetectors. According to the results of non-stationary simulation, it is reasonable to optimize the parameters of the lasers-modulators and develop new construction methods aimed at the improvement of photodetectors’ response time.
Highlights
Nowadays, on-chip metal interconnections are very close to the physical limit of their application in state-of-the-art integrated circuits (ICs)
We propose two techniques designed for the numerical simulation of high-speed optoelectronic devices within the drift-diffusion approximation
We developed the specialized software package for the numerical simulation of carrier transport and accumulation in high-speed on-chip optoelectronic devices based on AIII BV heterostructures
Summary
On-chip metal interconnections are very close to the physical limit of their application in state-of-the-art integrated circuits (ICs). The sustainable progress in IC production technology requires the immediate solution of the interconnection problem It can be performed by means of the development of new interconnection types or optimization and modification of traditional interconnecting techniques. Silicon photonics seem to be one of the advanced research directions in the field of IC optical interconnection [10,11,12] This approach provides some important benefits, such as small losses, adaptability to streamlined manufacture, and high efficiency of waveguides. In this paper we consider the modelling of dynamic characteristics of AIII BV high-speed optoelectronic devices for on-chip optical interconnections in ICs. The development of the appropriate model, simulation technique, and software is the purpose of the research. In spite of several limitations, it is utilized for the research of semiconductor devices and allows us to obtain adequate simulation results [17]
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