Abstract
AbstractWe consider a drift‐diffusion model for organic semiconductor devices including Gauss–Fermi statistics and application‐specific mobility functions. The charge transport in organic materials is realized by hopping of carriers between adjacent energetic sites and is described by complicated mobility laws with a strong nonlinear dependence on temperature, carrier densities and the electric field strength. We report on the existence of weak solutions to the stationary problem as well as global weak solutions to the instationary problem. Moreover, L∞ bounds for the solutions are established.
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