Abstract
Tunnel Field Effect Transistor can be introduced as an emerging alternate to MOSFET which is energy efficient and can be used in low power applications. Due to the challenge involved in integration of band to band tunneling generation rate, the existing drain current models are inaccurate. A compact analytical model for simple tunnel FET and pnpn tunnel FET is proposed which is highly accurate. The numerical integration of tunneling generation rate in the tunneling region is performed using Simpson’s rule. Integration is done using both Simpson’s 1/3 rule and 3/8 rule and the models are validated against numerical device simulations. The models are compared with existing models and it is observed that the proposed models show excellent agreement with device simulations in the entire region of operation with Simpson’s 3/8 rule exhibiting the maximum accuracy.
Highlights
Tunnel Field Effect Transistor (TFET) has been identified as a viable alternate to MOSFET in the nano scale semiconductor device category [1] - [4]
Investigations on the drain current modeling approaches indicate the need for an accurate method for integration of tunneling generation rate in the source body junction
The proposed modeling approach is based on integration of the tunneling generation rate by Simpson’s rule
Summary
Tunnel Field Effect Transistor (TFET) has been identified as a viable alternate to MOSFET in the nano scale semiconductor device category [1] - [4]. TFET with n+ pocket between source and channel is generally known as pnpn TFET and exhibits significant improvement in ON state current This is because the n+ pocket increases the electric field in the lateral direction, modulates the energy band profile, and shortens the tunneling width [8]. The drain current model is formulated by numerical integration of BTBT generation rate using Simpson’s rule. Both 1/3 and 3/8 rule is employed for model derivation and the models are compared for its accu-. BTBT generation rate is a function of electric field which is derived from surface potential. The drain current model published in literature [17], due to its tangent line approximation of the parabolic function has limited accuracy.
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