Abstract
We report a high optical-quality double-layer silicon (Si) material platform with a thin interface oxide using a low-temperature wafer bonding technique. To assess the quality of the platform, resonators with different radii are fabricated, and their quality factors (Q) are measured. Q's of 25 k and 350 k are demonstrated in 2- $\mu{\rm m}$ - and 20- $\mu{\rm m}$ -radius microring resonators, respectively. The former is the most compact high-Q resonator demonstrated in any type of double-layer Si platform, and the latter is the highest Q demonstrated in a double-layer Si platform to date. This material platform enables a new set of integrated optical devices for a wide range of applications, including high-speed modulators, tunable filters, and low-power switches.
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