Abstract
We analyze several sensors belonging to the magnetodiodes family and realized with silicon on sapphire (SOS) technology. They are: p <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -n-n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> , Schottky and filamentary magnetodiodes. These very simple devices have "micronic" dimensions compatible with VLSI and exhibit sensitivities which are two orders of magnitude higher than conventional sensors: 30 V/T have been measured on Schottky magnetodiodes without amplification and for low power dissipation. It is shown that the optimum operating as well as the improvement of the device design require conditions of high level injection, corresponding to double-injection phenomena: thus the establishment and the behavior of the so-called "semiconductor regime" have been systematically studied for numerous diodes with different geometries and dopings. Narrowest structures, shorter than 20 µm and with the doping below 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">22</sup> m <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-3</sup> are shown to be suitable. The detailed analysis of different magnetosensitivities is completed with experiments on noise, temperature, and high magnetic field.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
