Double Gates and Short-Channel Carbon Nanotube Transistors

Abstract

In this paper, through solving Poisson equations, a precise model for double-gates and dual-material carbon nanotube transistors is presented that is more comprehensive than the previous models. Thus, considering a double-gate transistor with a two-material gate, modeling and solving the Poisson equation are taken into consideration in two dimensions for a more accurate analysis of the inner potential of the channel. In this method, the inside electrostatic potential of the channel is obtained by summing two parts of the long channel potential. Also, the dependence of the inside load of the channel on its inside potential is considered in a way that gives a more accurate answer to the potential of the transistor. The potential is generally considered based on the sum of the one-dimensional potential in the channel (without any dependence on the surface potential) and the lateral potential changes in two dimensions. The charge in the Poisson relation is also considered to evaluate the dependence on the potential within the channel which provides a more complete analysis of the Poisson equation.