Abstract
In this article, a novel double-gate (DG) field-effect diode (FED) has been proposed, which exhibits smaller short-channel effects (SCEs), smaller OFF-state current ( $I_{\mathrm{\scriptscriptstyle OFF}}$ ) and higher ON-state current ( $I_{\mathrm{\scriptscriptstyle ON}}$ ) compared with the previously introduced common FEDs and the side-contacted FEDs (SFEDs). Based on the TCAD simulation study, due to the stronger control of the two gates over the channel, the proposed double-gate FED (DGFED) is shown to suppress the SCEs and to improve $I_{\mathrm{\scriptscriptstyle ON}}$ / $I_{\mathrm{\scriptscriptstyle OFF}}$ ratio significantly compared with the SFEDs. The proposed device is also shown to have smaller gate delay time, smaller energy-delay product, larger cutoff frequency, and larger transconductance than the SFED. Thus, DGFED is a promising device for substituting the SFED in possible high-frequency analog and digital applications.
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