Abstract
A time-domain model of an excited semiconductor medium as a moving Bragg grating was used to investigate a double-Doppler wavelength conversion of an infrared (λ0 = 1.5 μm) 0.8 ps width optical pulse. In order to calculate ultrafast electromagnetic transients, a time-domain Volterra integro-differential equation was used for simulations. It is shown here that the high drift velocity of carriers in an InAs semiconductor produces a 3.5 nm up and down (9.7 THz) conversion span. The converted pulse width and spectral density strongly depend on the contrast of permittivity modulation. The depth of modulation has to be at least 5–7. A −3 dB conversion efficiency can be gained with a depth of modulation more than 7 and a length of semiconductor layer greater than 20 μm.
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