Abstract
We studied the dephasing dynamics of coherent phonons in n-type, p-type, and intrinsic Si using time-resolved reflectivity measurements with sub-10 fs laser pulses. The dephasing time of the coherent phonons increases (decreases) for n-type (p-type) doping compared with that of intrinsic Si, while the frequencies of the coherent phonons exhibit a redshift for both types of doping. These doping-induced changes in the coherent phonon dynamics are observed when the carrier concentration exceeds 1019 cm−3. The doping-type dependent changes in the dephasing time are attributed to the interconduction and intervalence band transitions in n-type and p-type Si, respectively.
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