Abstract
The suitability of doping (‘‘nipi’’) superlattices based on InSb for 10 μm detector applications is studied and 77 K D* values of 8.1×1010 cm√Hz/W are found in optimized structures. The mode of nipi operation results in ‘‘self-passivating’’ devices which are compatible with III-V processing technology, and sensitivity uniformity figures superior to CdHgTe devices for large-area integrated detector arrays are predicted.
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