Abstract
Using self-consistent tight-binding calculations, we show that modulation doping can be used to screen macroscopic polarization fields in nitride quantum wells. The blue-shift of photoluminescence peak as well as the reduction of radiative recombination lifetime at increasing doping density is explained and correlated to polarization-field screening. The field-induced ionization of the dopants and its relation with alloy composition in the heterostructure barriers is also analyzed.
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