Abstract
Electronic properties of doped chalcogenide glasses are discussed on the basis of the Street-Mott model by taking a finite width of gap states into account. The conduction activation energy depends strongly on the shape of the gap state energy distribution. A rather gradual change in the activation energy with the increas of impurity concentrations, often observed in experiments, is well reproduced by introducing relatively small values for the distribution width. It is then possible to estimate the fraction of dopant atoms, which actually change conductivity, by comparing the results of the present model with experiments.
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