Abstract
High quality InxGa1−xAs/GaAs strained-layer superlattices (SLS’s), with 0.11≤x≤0.20, have been grown by molecular beam epitaxy. The test structures grown include the first doped material in this SLS system, with Si being used for n-type doping and Be for p-type. A number of structures with up to 80 superlattice periods and with layer thicknesses in the 40–140 Å range have been characterized by x-ray diffraction and optical techniques. Doped specimens have been characterized by C–V profiling and, for diode structures, by I–V, four-terminal resistivity, and Hall-effect measurements. Hall mobilities (parallel to the layers) at 23 °C are comparable to those of high quality bulk alloy material, further evidence of the high crystalline quality possible in multilayer structures with thin, highly mismatched (>1%) layers.
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