Abstract
By introducing Si1−x−yGexCy layers in vertical p-channel MOSFETs, boron diffusion from the source/drain regions into the channel region has been suppressed to enable sub-100 nm scaling. The trade-off of doped and undoped Si1−x−yGexCy layers has been studied. Due to detrimental effects from oxide grown on Si1−x−yGexCy layers, doped Si1−x−yGexCy diffusion barriers are preferable, and have allowed vertical p-channel MOSFETs with channel lengths down to 25 nm to be demonstrated. No excess leakage current due to the Si1−x−yGexCy layers is observed.
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