Abstract
AbstractA SIMS analysis of As-, B- and P- diffusion across the TaSi2/si interface into mono- Si was carried out together with an electrical characterization of the resulting structures. In the temperature range 900°C T 1000°C all three types of dopants readily diffused into Si without drastic segregation effects when appropriate interface cleaning was applied. This implies a variety of applications. In particular, very shallow diffusion regions were obtained in the mono Si underneath the implanted Tasi2 for As as well as for B and P, even at relatively long annealing times sometimes needed for subsequent process steps.
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