Abstract
The D\ifmmode^\circ\else\textdegree\fi{}-h impurity-related photoluminescence spectra of confined donors in GaAs-(Ga,Al)As quantum wells is theoretically investigated within the effective-mass approximation. The impurity wave functions and binding energies are evaluated via a variational procedure. Calculations are performed for different well widths, temperatures, and impurity doping profiles. Typical D\ifmmode^\circ\else\textdegree\fi{}-h theoretical photoluminescence line shapes show peaked structures corresponding to on-center and on-edge donors in good agreement with experimental results.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
