Abstract
Based on the effective-mass approximation, the impurity binding energy in a square tangent quantum dot is calculated variationally. The impurity binding energy has been calculated as a function of d,U0, pressure and the impurity position. It is found that d,U0, pressure and the impurity position have great effects on the impurity binding energy. It is worth to note that the effect of pressure should be taken into consideration in the experimental study of semiconductor nanostructures.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
