Abstract
This work demonstrates a relationship between ferroelectric domain wall pinning by dopants and the local order parameter amplitude around the dopants. The authors propose that such pinning can be predicted from the free-energy landscape of polarization switching.
Highlights
Since the demonstration of enhanced conductivity at ferroelectric domain walls about a decade ago [1,2,3], much effort has been devoted to understanding the intrinsic domain wall properties [4] as well as developing their functionality for nanoscale device concepts [5,6]
YMnO3 is isostructural with ErMnO3, which is known to display qualitatively equivalent ferroelectric properties, domain structures, and domain walls, and, importantly, systematic microscopy studies on doped ErMnO3 are available in literature [4,29,31,34]
The domain wall mobility, inferred from Density functional theory (DFT) calculated migration energy barriers, is affected by the presence of cation dopants and can explain differences in domain wall roughening for different dopants
Summary
Since the demonstration of enhanced conductivity at ferroelectric domain walls about a decade ago [1,2,3], much effort has been devoted to understanding the intrinsic domain wall properties [4] as well as developing their functionality for nanoscale device concepts [5,6]. A challenging aspect of understanding domain walls is to characterize the local stoichiometry and the influence of point defects on the measured properties in order to establish compositionproperty relationships and disentangle extrinsic from intrinsic effects. Ferroelectric domain walls are structurally subnanometer wide regions that separate two symmetry equivalent domain states [7,8] that are known to accumulate defects, and these small variations in the stoichiometry of transition metal oxides are known to induce large changes in their properties [9].
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