Abstract
We have shown, firstly, that the response time(τresp) of the double-barrier resonant-tunnelling diode (RTD) can be muchsmaller as well as much larger than the quasibound-state lifetime inthe quantum well (τdwell). Secondly, the real part of the RTDconductance can be negative and large at the frequencies higher thanthe reciprocal τdwell in the RTDs with a heavily dopedcollector without spacer layers. The Coulomb interaction of the electrons in the quantumwell with emitter and collector is responsible for the effects. Asimple analytical expression for the impedance of the RTD has beenderived and an equivalent circuit has been proposed.
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