Abstract
We correlated the concentration of alkylamine in the mixed anti-solvent with the growth process of the perovskite films and the defect passivation effect. The assisted crystal growth process based on “Ostwald ripening” was proposed. Benefiting from the assisted growth effect of dodecylamine on perovskite, the perovskite films have improved crystallinity, optimized interface, reduced defect concentration and suppressed non-radiative recombination of carriers. As a result, a power conversion efficiency of 21.67% was obtained for the devices based on mixed anti-solvent. And owing to the inherent hydrophobicity of the alkyl chains, the devices also have excellent humidity stability. This work provides a facile way to obtain high-quality perovskite films.
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