Abstract
The deep defect distributions affecting majority carrier trapping in polycrystalline CuIn 1− x Ga x Se 2 (CIGS) have been studied using drive level capacitance profiling. This technique provides, a spatial and energetic profile of sub-band gap defect transitions in the CIGS layer of working photovoltaic devices, while remaining insensitive to surface states. The bulk response was dominated by a defect which varied between 0.1 and 0.3 eV, according to the Meyer-Neldel rule. Devices grown at reduced substrate temperatures had smaller grain sizes and additional defect response. The effect of a light-soaking treatment, using near-band gap optical excitation, was studied. Both the free carrier density and the density of deeper defects were increased by this treatment. Device quality was degraded, predominantly due to a decreased fill factor.
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