Abstract
Gamma irradiation effects on the thin film of titanium dioxide (TiO2) coated on p-type silicon (Si) and porous silicon (PSi) by sol–gel spin coating technique is investigated for the gamma dose of 100 to 1000 mGy. Characterization studies by the X-Ray Diffraction, Fourier Transform Infrared and Photoluminescence spectroscopy, and I-V study revealed the measurable changes in structural, optical and electrical properties due to gamma irradiation which are disparate in the hetero-junction on silicon and porous silicon texture. The anatase phase of TiO2 experienced linear defects then the rutile phase structure. Band gap energy is decreased while the dielectric constant is increased with increase of gamma dose. The strain due to crystallization of sol–gel of TiO2 on Si substrate is higher than the PSi substrate and found to be changed after irradiation. Porous texture is found to be suitable for formation of larger crystallite with less strain which can provide mechanical stability.
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