Abstract
An investigation of dislocation sources in silicon deformed by thermal shock has been made by means of X-ray topography. Deformation occurs by means of surface and internal planar dislocation sources. The dislocations are in 60° or pure screw orientation except in regions of high dislocation density. The sources belong to the three {111} planes inclined to the surface (also a (111) plane). Nearly all Burgers vectors were in the plane of the slice, but a few inclined pure screw dislocations and Lomer dislocations were also observed. Both single and double-ended sources were present, the majority being single-ended. Their configurations (which were usually complex) and some associated dislocation interactions are discussed.
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