Abstract
AbstractDislocation motion in {100} 〈110〉 and {111} 〈110〉 secondary slip systems has been observed in NaCl, KCl, KBr, KI, and RbI crystals at room temperature by means of a special loading and etch‐pit technique. The observed reduction in the difference between the critical resolved shear stress τs{110} in the primary slip system {110} 〈110〉 and τs in the secondary slip system in the above sequence of crystals demonstrates the increasing influence of multiplication processes of dislocations on dislocation motion in the primary system. A considerably lower effect of γ‐irradiation on τs{100} and τs{111} has been found in comparison with that of τs{110}. Possible reasons are discussed briefly.
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