Abstract
Microdisks incorporating InGaN quantum dots were fabricated using SiO2 microspheres as a hard mask in conjunction with a photoelectrochemical etch step from a structure containing a sacrificial InGaN/InGaN superlattice. Formation of microdisks from two near-identical structures with differing dislocation densities was carried out and investigated using microphotoluminescence. This confirmed the existence of quantum dots through the presence of resolution limited spectral lines and showed a clear correlation between the resulting modes quality factors and the dislocation densities within the disks. The disks with higher dislocation densities showed up to 80% lower quality factors than the low dislocation density disks.
Highlights
The Harvard community has made this article openly available
There has been much recent progress in the demonstration of cavity quantum electrodynamics (CQED) in the solid state using modal engineering of high quality optical cavities to dramatically alter the optical behaviour of emitters embedded within
Weak coupling of emitter and cavity can produce controlled single photon emission and ultra-low threshold optical sources[1,2,3], while in the limit of strong emitter-cavity coupling new quantum mechanical states have been observed[4,5,6,7] that could serve as the basis for quantum information processing[8]
Summary
The Harvard community has made this article openly available. Please share how this access benefits you. Dislocation density-dependent quality factors in InGaN quantum dot containing microdisks
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