Abstract
It has been demonstrated controlling maximum permissible current overloads and reverse currents of semiconductor power devices using a single device is practically impossible and the actual amplitude–time dependences of permissible current overloads should be determined by a computational analytical method. A new method for generating single and repeating heavy voltage sinusoidal pulses based on application of the principle of discrete superposition of charges in a galvanically isolated control circuit has been presented. A diagram of discrete superposition of charges in a galvanically isolated power circuit has been presented. Distinguishing characteristics of its determination have been shown.
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