Abstract
Based on the excellent piezoelectricity of AlGaN/GaN heterostructures, a pressure sensor was fabricated combined with micro machining technology. Direct readout was realized by adopting Wheatstone bridge structure and the sensor showed favourable pressure responses. At the operation voltage of 5 V, the fabricated AlGaN/GaN pressure sensor exhibited a sensitivity of 7 μV/kPa with low non-linearity of 0.8% over a wide pressure range (from 0.1 to 5 MPa). As far as we know, this is a recorded responsive sensitivity in the reported direct-readout AlGaN/GaN pressure sensor.
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