Abstract
Silicon nitride nanowires were synthesized using silicon monoxide as raw materials and an alumina plate as substrate at 1500°C. The obtained nanowires were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, scanning electron microscopy, high-resolution transmission electron microscopy and thermogravimetric-differential scanning calorimetry. The results revealed that silicon nitride nanowires possess a diameter of about 200 nm and a length of several hundred micrometres. The preferred growth direction of the nanowires was [100]. The chemical and structural composition of the silicon nitride nanowires were also studied and were shown to have a composition of primarily α-Si3N4. The temperature for fierce oxidation in air was above 1135°C. The formation mechanism of silicon nitride nanowires was assumed to be a vapour-solid (VS) process.
Highlights
One dimensional nanoscale materials always have a range of excellent properties due to their special structure and limited dimensions
As one type of one dimensional nanoscale materials, silicon nitride (Si3N4) nanowires possess a series of unique properties, such as high fracture toughness, high elastic modulus, light weight and good resistance to thermal shock and oxidation [1,2]
The results revealed that the synthesized nanowires were mainly α phase Si3N4 (PDF No.09-0250), accompanied by a small
Summary
One dimensional nanoscale materials always have a range of excellent properties due to their special structure and limited dimensions. As one type of one dimensional nanoscale materials, silicon nitride (Si3N4) nanowires possess a series of unique properties, such as high fracture toughness, high elastic modulus, light weight and good resistance to thermal shock and oxidation [1,2]. Consequent‐ ly, Si3N4 nanowires show great potential as reinforcement materials, especially at high temperatures. For α-Si3N4 nanowires, the dielectric constant is slightly elevated due to the small size effect [3]. ΑSi3N4 nanowires remain a promising material in wavetransparent devices, especially for window antennae and high speed radomes [4]. Many novel properties such as photoluminescence, caused by the basic effects of nanomaterials, will be prevalent. Si3N4 nanowires hold potential for application in electronic and optic nanodevices [5]
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