Abstract
A new method for the determination of the four noise parameters of the metal oxide semiconductor field effect transistors (MOSFETs) based on the noise figure measurement system without microwave tuner is presented. The noise parameters are determined based on a set of analytical expressions of noise parameters by fitting the measured noise figure of the active device. These expressions are derived from an accurate small signal and noise equivalent circuit model, which takes into account the substrate parasitics, pad capacitances, and series inductances. On-wafer experimental verification is presented and a comparison with tuner based method is given. Good agreement is obtained between simulated and measured results for 0.5 × 5 × 16 μm, 0.35 × 5 × 16 μm and 0.18 × 5 × 16 μm (gate length × number of gate fingers × unit gate width) MOSFETs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
