Abstract
We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO_{3}, using hard x-ray photoelectron spectroscopy. We determine that the band gap renormalization is almost entirely associated with the evolution of the conduction band. Our experimental results are supported by hybrid density functional theory supercell calculations. We determine that unlike conventional TCOs where interactions with the dopant orbitals are important, the band gap renormalization in La-BaSnO_{3} is driven purely by electrostatic interactions.
Highlights
We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO3, using hard x-ray photoelectron spectroscopy
The realization of epitaxial TCOs by molecular beam epitaxy such as n-type La-doped BaSnO3 (LBSO) [3], and p-type Sr-doped LaCrO3 [4,5], means that these TCOs are compatible with the perovskite based “oxide electronics” [6,7,8]
LBSO, with its delocalized s orbital derived conduction band minimum (CBM) [16], presents an idealized TCO system for examining the effects of band gap renormalization associated with the MB shift
Summary
Direct Observation of Electrostatically Driven Band Gap Renormalization in a Degenerate Perovskite Transparent Conducting Oxide We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO3, using hard x-ray photoelectron spectroscopy.
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