Abstract
Spatially localized measurements of structure and properties using scanning probe techniques (scanning tunneling microscopy, tunneling spectroscopy, local conductance profile measurement, etc.) have, for the most part, been restricted to single crystal surfaces. The application of these techniques to the study of atomic bonding at interfaces, of which at least one material is an oxide, is explored here in three model experiments. The intrinsic limit of spatial resolution of STM on low conductivity semiconductors (oxides) is first discussed. Then, the local density of states at a metal-TiO2 inteface is measured with tunneling spectroscopy and states associated with the metal-oxide bond identified. Local conductance profiles across individual grain boundaries in Si and SrTiO3 are presented and space charge regions adjacent to oxide grain boundaries are directly detected. Finally, interface bonding is probed by characterizing topographic structure of gold-sapphire interface fracture surfaces.
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