Abstract
We determined the energy distribution of donor-like interface state density DitD(E) at the Al2O3/AlGaN interface in a metal/Al2O3/AlGaN/GaN heterostructure (MISH) capacitor. In this order, we developed a point-by-point graphical method based on the measurement and simulations of the MISH photocapacitance versus ultraviolet light intensity. We found a tail-like shaped DitD(E) strongly decreasing from the value of 5×1013 to 4×1012 eV−1 cm−2 in the energy range between 0.12 eV and 0.45 eV from the AlGaN valence band edge.
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