Abstract
Scanning transmission electron microscopy-energy dispersive X-ray spectroscopy measurements performed on Cu(In,Ga)Se2 (CIGS) thin-film devices grown with RbF postdeposition treatment (RbF-PDT) revealed the formation of a RbInSe2 compound at the p-CIGS/n-CdS heterointerface. However, this type of Rb-compound formation was not observed with elemental In-free ternary CuGaSe2 (CGS) devices. The film surface of CIGS grown with RbF-PDT was found to be Ga-depleted; thus, the practical interface structure turned out to be CIGS/(CuInSe2, RbInSe2)/CdS. In contrast to the significant improvements observed in In-containing CIGS photovoltaic device performance with RbF-PDT, no significant improvements have been observed in In-free CGS devices thus far. These results suggest that the presence of elemental In plays a key role in obtaining beneficial alkali Rb effects for enhancing device performance as well as surface modification with RbF-PDT.
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