Direct growth of ZnTe on Si(100) and Si(111) substrate by molecular beam epitaxy

Abstract

ZnTe was directly grown on Si(100) and Si(111) substrate respectively using elemental sources by molecular beam epitaxy. It was found that ZnTe can be grown on both Si(111) and Si(100) substrates in alignment with the orientation of (111). A microscopic growth interface model of diamond crystal structure was proposed to explain this phenomenon. This is a supplement to the existing theory of predicting possible crystalline orientation alignment relationship based on lattice mismatch value in the heteroepitaxial growth on (100) surfaces of zinc blende structure. High resolution transmission electron microscopy (HRTEM) was used to investigate the ZnTe(111)/Si(100) and ZnTe(111)/Si(100) interface. Application of digital image processing involving a filtered inverse fast Fourier transformation revealed an array of misfit dislocations at the ZnTe/Si(111) interface.