Direct growth of MoS2 on electrolytic substrate and realization of high-mobility transistors

Abstract

Electrostatic gating with ionic liquids, contributing to the accumulation of high surface charge carriers, has been often exploited in thin-film transistors. However, the intrinsic liquid nature of ionic liquids inhibits them from constituting a practical platform for thin-film devices. To this end, lithium-ion solid electrolytic substrates, often used for battery technology, offer similar benefits as ionic-liquids, with the added advantage of solid-state compatibility. In this work, the authors explore a lithium-ion solid electrolytic substrate for direct growth of MoS${}_{2}$ by chemical vapor deposition method. A near ideal subthreshold swing around 65 mV/dec with field-effect mobility values of 42-49 cm${}^{2}$V${}^{\ensuremath{-}1}$s${}^{\ensuremath{-}1}$ has been achieved with the devices on as-grown crystal, back-gated by the solid electrolyte.