Abstract
Cu diffusion in chalcopyrite CuInSe2 was studied directly, using 64Cu as a radioactive tracer. For diffusion from a thin surface layer, the Cu diffusion coefficients at 380 and 430 °C, were found to vary from 10−8 to 10−9 cm2/s. In case of diffusion from a volume source at 400 °C, a value of 10−10 cm2/s was calculated from diffusion profiles. Electromigration of Cu was demonstrated, by applying a strong electric field to a sample and following the redistribution of 64Cu, that had been thermally diffused into the sample, prior to electric field application.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
