Abstract
The realization of diode-pumped waveguide amplifiers and lasers based on highly doped Y2SiO5:Yb3+(YSO:Yb) epitaxial layers is reported. An original single-diode-bar face-pumping configuration is used. The propagation losses are, respectively, lower than 0.3 and 0.8 dB/cm for 12% and 24% Yb-doped waveguides. The amplifiers provide up to 2.9 dB/cm net amplification at 1082nm, with spatially single-mode output. Monolithic waveguide lasers exhibited 14% slope efficiency, with 340 mW output power at 1082 nm.
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